5 edition of Compound Semiconductors Strained Layers and Devices (ELECTRONIC MATERIALS SERIES Volume 7) (Electronic Materials Series) found in the catalog.
February 1, 2000
Written in English
|Contributions||Suresh Jain (Editor), Magnus Willander (Editor), R. Van Overstraeten (Editor)|
|The Physical Object|
|Number of Pages||352|
7 Atomic-Layer Deposited High-k/III-V Metal-Oxide-Semiconductor Devices reaction between GaAs and oxygen in the gas ambient is expected to form Ga-oxide, As-oxide, remaining elemental As and sometimes even a large amount of vacancies due to the high volatility of As. Smart Stacking™ technology for compound semiconductors 4 Generic technology for various materials: Si, GaAs, InP, GaN & InP epi layers Smart Stacking™ demonstrated in a pilot line mode Ohmic, low resistance bonding and optically transparent. Technology scalable to mm or even higher wafer sizes Nov 14th Semicon Europa
Other than elemental and compound semiconductors, semiconductor alloys also exist and are extremely useful. For example Si1-x Gex is a binary allows of Si and Ge and the lattice of Si1-x Gex consists of x fraction of Ge atoms and 1-x fraction of Si atoms arranged randomly. On the other hand SiC is a compound semiconductor with zinc blende Lattice. Compound Semiconductor Device Physics (The Open Edition) Sandip Tiwari Original Publisher: ACADEMIC PRESS Originally published by Harcourt Brace Jovanovich, Publishers This open book is made available under the Creative Commons License with Attribution license terms; you are free to share and distribute with attribution.
Compound semiconductor epitaxial growth and heterostructure devices; electrical, electro-optic, galvanomagnetic and optical properties of bulk layers, heterojunctions, quantum wells, superlattices, and other nanostructures. In-situ microscopy is used to gauge atomic scale reactions and processes in advanced semiconductor devices. S. S. Lau. and insertion of strained-layer superlattices. Compound Semiconductor There are many compound semiconductor materials. They are usually formed from III-V group, II-VI, IV-VI, I-III-VI2 elements. III-V group semiconductors are GaAs, GaP, GaN, A1As, InSb, InAs, .
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Although it is not possible to describe all this work in a monograph of this size, Compound Semiconductors Strained Layers and Devices provides an overview with sufficient detail to cover all the essential aspects of recent developments in the field.
Compound Semiconductors Strained Layers and Devices. Authors (view affiliations) S. Jain; M. Willander; R. Van Overstraeten; Book. 12 Citations; About this book. Keywords. compound defects optical properties semiconductor semiconductors.
Authors and affiliations. The book concentrates on compound semiconductors with emphasis on wideband gap II-VI and III-Nitride semiconductors.
GeSi strained layers are discussed for comparison to. -Electrical Transport Studies of InGaAs/GaAs Strained-Layer Quantum-Well Structures -Device Structures Based on GaAsP/InGaAs Strained Layer Superlattices and Their Stability -The Preparation and Infrared Properties of In (AsSb) Strained-Layer Superlattices -Ion Implantation of III-V Compound Semiconductor Strained-Layer Semiconductors Systems.
In the last Compound Semiconductors Strained Layers and Devices book of the book, the physics and functionality of optoelectronic and electronic device structures (LEDs, laser diodes, solar cells, field-effect and heterojunction bipolar transistors) are discussed on the basis of the specific properties of compound semiconductors presented in the preceding chapters of the book.
Compound semiconductors form the back-bone of all opto-electronic and electronic devices 5/5(1). Chemical growth methods of electronic materials are the keystone of microelectronic device processing. This book discusses the applications of metalorganic chemistry for the vapor phase deposition of compound semiconductors.
Vapor phase methods used for semiconductor deposition and the materials properties that make the organometallic precursors useful in the electronics industry are. This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound semiconductors.
It provides a complete overview of the technologies necessary to grow bulk single-crystal substrates, grow hetero-or homoepitaxial films, and process advanced devices such as HBT's, QW diode lasers, etc.
Stephen W. Downey, in Handbook of Compound Semiconductors, Channeling. Compound semiconductor devices have many desirable properties, e.g., high speed, that are a result of good crystalline quality.
Most devices are usually fabricated using epitaxial growth techniques of thin layers. SMA - Compound Semiconductors Lecture 11 - Heterojunction FETs Device enhancement using pseudomorphic layers Strained channels Device-to-device isolation is achieved by mesa-etching.
A problem is lack of planarity. Fonstad, 3/03 Lecture 11 - Slide 9. Widely Used Compound Semiconductor Devices Pseudomorphic refers to the fact that there is strain in and between layers due to the lack of crystal lattice matching (AlGaAs – InGaAs: below t process uniformity and device layers.
17 4/28/ “Photo” Defined Gate. The GaN buffer layer is patterned and trenches are made and refilled with sputtered tungsten (W)/silicon dioxide (SiO 2) forming passivated metal electrode grids. GaN is then regrown, nucleating from the exposed GaN seed layer and coalescing to form a thick GaN device layer.
A metal electrode can be deposited and patterned on top of the GaN layer. Although compound semiconductors offer enhanced performance (e.g., higher device speed in GaAs, high-temperature operation in SiC, etc.) the inability to form a device-quality native oxide (e.g., SiO 2 on Si) and ohmic contact has restricted the application of devices on compound semiconductors to limited and specific uses.
Most problems. Semiconductor Device Physics and Design teaches readers how to approach device design from the point of view of someone who wants to improve devices and can see the opportunity and challenges.
It begins with coverage of basic physics concepts, including the physics behind polar heterostructures and strained s: 5. Strained-layer semiconductors have revolutionized modern heterostructure devices by exploiting the modification of semiconductor band structure associated with the coherent strain of lattice-mismatched heteroepitaxy.
The modified band structure improves transport of holes in heterostructures and enhances the operation of semiconductor lasers. SMA - Compound Semiconductors Lecture 7 - Epitaxy Techniques and Considerations - Outline • Lattice-matching considerations Natural lattice-matching 1.
Review of lattice-matched material systems (Lect. 1 discussion) 2. Lattice pulling Forced lattice matching 1. Pseudomorphic layers 2. Mattews-Blakeslee limit, other models 3. In the last part of the book, the physics and functionality of optoelectronic and electronic device structures (LEDs, laser diodes, solar cells, field-effect and heterojunction bipolar transistors) are discussed on the basis of the specific properties of compound semiconductors presented in the preceding chapters of the book.
This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound semiconductors. It provides a complete overview of the. 2 Strained Layer Epitaxy + Show details-Hide details p. 24 –97 (74) In this chapter, the technology of growth of group-IV alloy films and their characterization is discussed.
The deposition of heteroepitaxial films in greater depth using various reactors is also examined. Summary. We demonstrate III–V compound semiconductor (GaAs, InGaAs, and GaN) based metal-oxide-semiconductor ﬁeld-eﬀect transistors (MOSFETs) with excellent performance using an Al 2O 3 high-permittivity (high-k) gate dielectric, deposited by atomic layer deposition (ALD).
These MOSFET devices exhibit ex-tremely low gate-leakage current. Compound Semiconductors: Physics, Technology, and Device Concepts (1st Edition) by Ferdinand Scholz (Editor) Hardcover, Pages, Published ISBN / ISBN / This book provides an overview of compound semiconductor materials and their technology.
After prese. A new GaAs/InGaAs/InGaP compound semiconductor nanotube material structure was designed and fabricated in this work. A thin, InGaAs-strained material layer was designed in the nanotube structure, which can directionally roll up a strained heterostructure through a normal wet etching process.
The compound semiconductor nanotube structure was grown by gas-source molecular beam epitaxy. In particular, compound semiconductors heterogeneously integrated on Si substrates have been actively studied 7,9, such devices combine the high mobility of III–V semiconductors.
Overview. The first true introduction to semiconductor optoelectronic devices, this book provides an accessible, well-organized overview of optoelectric devices that emphasizes basic principles. KEY TOPICS: Coverage begins with an optional review of key concepts—such as properties of compound semiconductor, quantum mechanics, semiconductor statistics, carrier transport .